Memory cell write

ABSTRACT

Embodiments of a memory cell comprising a voltage module configured to supply a first supply voltage and a second supply voltage, a data node programming module configured to receive the first supply voltage and to program a data node based at least in part on a write data line, and a complementary data node programming module configured to receive the second supply voltage and to program a complementary data node based at least in part on a complementary write data line, wherein the voltage module is configured such that the first supply voltage is substantially different from the second supply voltage for a period of time while the memory device is being programmed. Additional variants and embodiments may also be disclosed and claimed.

CROSS REFERENCE TO RELATED APPLICATION

The present application is a continuation of and claims priority under35 U.S.C. §120 to U.S. patent application Ser. No. 12/564,765, entitled“MEMORY CELL WRITE,” filed Sep. 22, 2009, assigned to the same assigneeas the present application, and incorporated herein by reference in itsentirety.

TECHNICAL FIELD

Embodiments of the disclosure relate generally to fields of electronicsystems, and more particularly, to memory cells.

BACKGROUND

For some applications, it may be desirable to achieve a relatively lowminimum operating voltage (e.g., low active VccMin), in order to, forexample, save power. In some of these applications, caches (e.g.,small-signal arrays), memories and/or register files may limit theactive VccMin of a circuit. Accordingly, it may be desirable to improvethe active VccMin (e.g., by lowering the active VccMin) in caches,memories and/or register files.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments will be described referencing the accompanyingdrawings in which like references denote similar elements, and in which:

FIG. 1 schematically illustrates a conventional memory cell, which maybe used to store a single bit of data;

FIGS. 2 a and 2 b schematically illustrate an exemplary memory cell, inaccordance with various embodiments of the present invention;

FIG. 2 c illustrates exemplary timing diagram for variations in anequalizing control signal of FIG. 2 b;

FIG. 2 d schematically illustrates an exemplary register file thatincludes a plurality of memory cells, in accordance with variousembodiments of the present invention; and

FIG. 3 schematically illustrates another exemplary memory cell, inaccordance with various embodiments of the present invention.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

Illustrative embodiments include, but are not limited to, methods andapparatus for writing in a memory cell.

Various aspects of the illustrative embodiments will be described usingterms commonly employed by those skilled in the art to convey thesubstance of their work to others skilled in the art. However, it willbe apparent to those skilled in the art that alternate embodiments maybe practiced with only some of the described aspects. For purposes ofexplanation, specific numbers, materials, and configurations are setforth in order to provide a thorough understanding of the illustrativeembodiments. However, it will be apparent to one skilled in the art thatalternate embodiments may be practiced without the specific details. Inother instances, well-known features are omitted or simplified in ordernot to obscure the illustrative embodiments.

Further, various operations will be described as multiple discreteoperations, in turn, in a manner that is most helpful in understandingthe illustrative embodiments; however, the order of description shouldnot be construed as to imply that these operations are necessarily orderdependent. In particular, these operations need not be performed in theorder of presentation.

The phrase “in some embodiments” is used repeatedly. The phrasegenerally does not refer to the same embodiments; however, it may. Theterms “comprising,” “having,” and “including” are synonymous, unless thecontext dictates otherwise. The phrase “A and/or B” means (A), (B), or(A and B). The phrase “A/B” means (A), (B), or (A and B), similar to thephrase “A and/or B.” The phrase “at least one of A, B and C” means (A),(B), (C), (A and B), (A and C), (B and C) or (A, B and C). The phrase“(A) B” means (B) or (A and B), that is, A is optional.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a wide variety of alternate and/or equivalent implementations maybe substituted for the specific embodiments shown and described, withoutdeparting from the scope of the embodiments of the disclosure. Thisapplication is intended to cover any adaptations or variations of theembodiments discussed herein. Therefore, it is manifestly intended thatthe embodiments of the disclosure be limited only by the claims and theequivalents thereof.

FIG. 1 schematically illustrates a conventional memory cell 100, whichmay be used to store a single bit of data. The memory cell 100 may beoperatively coupled to a write word line 102 that may transition from alow voltage (e.g., a voltage level that represents logic 0, a relativelylow voltage, a voltage that is at or near a ground voltage, and/or thelike) to a high voltage (e.g., a voltage level that represents logic 1,a relatively high voltage, a voltage that is at or near a supply voltageVcc, and/or the like) whenever data is written to the memory cell 100.That is, the write word line 102 may transition from 0 to 1 whenever thememory cell 100 is programmed.

The memory cell 100 may also be operatively coupled to a write data line104 and a complementary write data line 106. The write data line 104 maybe set to 0 when data bit 0 is written to the memory cell 100, and maybe set to 1 when data bit 1 is written to the memory cell 100. Thecomplementary write data line 106 may, in contrast, be set to 1 whendata bit 0 is written, and may be set to 0 when data bit 1 is written tothe memory cell 100.

The memory cell 100 may include a data node 108 and a complementary datanode 110 operatively coupled to pass gate (PG) transistors PG 140 and PG142, respectively, as illustrated in FIG. 1. The memory cell 100 mayalso include a voltage module 150 (illustrated by dotted line), that maybe shared with one or more other memory cells and configured to generatea supply voltage for one or more components of the memory cell 100. Thevoltage module 150 may include shared transistors SH 152, SH 154 and SH156. The transistors SH 152, SH154 and SH 156 may be controlled byrespective fuses fuse 1, fuse 2 and fuse 3. The fuses 1, 2 and 3 maycontrol transistors SH 152, SH154 and SH 156 such that a node A ispulled at or near the supply voltage Vcc (because of voltage drop at theshared transistors SH152, . . . , 156, the voltage at node A may beslightly less than Vcc). The memory cell 100 may also include pull up(PU) transistors PU 120 and 130, and pull down (PD) transistors 122 and132, as illustrated in FIG. 1.

In the memory cell 100, a single data bit may be stored in the data node108. Also, when bit 0 is stored in the data node 108, bit 1 may bestored in the complementary data node 106, and vice versa. Anappropriate read circuit (not illustrated in FIG. 1) may read the datastored in the data node 108 and/or the complementary data node 110.

A write operation or programming of the memory cell 100 is now explainedby assuming that the memory cell 100 had a bit 1 stored in the data node108 (i.e., a bit 0 stored in the complementary data node 110), and iscurrently being programmed to store bit 1 (illustrated by “transitionfrom 1 to 0” in the data node 108 in FIG. 1). While being programmed,the write word line 102 may transition from low (e.g., 0) to high(e.g., 1) state, which may turn ON the pass gate transistors PG 140 andPG 142. Also, the write data line 104 may be 0 and the complementarywrite data line 106 may be 1, based on data bit 0 being programmed inthe memory cell 100.

Before the beginning of the write operation, the data node 108 wasmaintained at high voltage (i.e., storing bit 1), and the complementarydata node 110 was maintained at low voltage (i.e., storing bit 0). Thus,before the beginning of the write operation, the PU 120 was ON (as thecomplementary data node 110 was at 0), thus maintaining the data node108 at a high voltage by operatively coupling the data node 108 with thesupply voltage Vcc through PU 120 and one or more of the sharedtransistors SH 152, . . . , 156. Similarly, before the beginning of thewrite operation, the PD 132 was ON, thus maintaining the complementarydata node 110 at a low voltage by operatively coupling the complementarydata node 110 to the ground potential through PD 132.

Upon commencement of the write operation, the PG 140 may be turned ON bythe write word line 102, which may try to pull down the data node 108 tothe low voltage of the write data line 104. On the other hand, as thecomplementary data node 110 was at a low voltage before commencement ofthe write operation, the low voltage of the complementary data node 110may continue to keep ON the pull up transistor PU 120, which may preventthe data node 108 to enter in the low voltage state (as the PU 120 maycontinue supplying high voltage from node A to the data node 108). Also,as long as the data node 108 is at the high voltage state, this mayprevent turning ON of PU 130 and continue to keep the PD 132 at ON,which may try to maintain the complementary data node 110 at lowvoltage.

Put differently, although the PG 140 may try to pull down the voltage ofthe data node 108 to a low voltage as part of the write operation, thetransistor PU 120 (which was ON before commencement of the writeoperation, and tries to remain ON as the complementary data node 110 hasnot fully turned to high) may try prevent the data node 108 totransition to the low voltage. Similarly, although the PG 142 may try topull up the voltage of the complementary data node 110 to a high voltageas part of the write operation, the PU 130 (which was OFF beforecommencement of the write operation, and tries to remain OFF as the datanode 108 has not fully turned to low voltage) and the PD 132 (which wasON before commencement of the write operation, and tries to remain ON asthe data node 108 has not fully turned to low voltage) may try preventsuch operation.

Thus, while programming a bit 0 to the memory cell 100 that initiallyincluded a bit 1, there may be a conflict between operations oftransistors PG 140 and PU 120, and the write operation may not becompleted successfully unless the PG 140 overpowers the PU 120 andbrings the data node 108 to a low voltage. This conflict is usuallytermed as “contention,” as transistors PG 140 and PU 120 may be“contending” with each other. Similarly, there may be a conflict betweenoperations of transistors PG 142, PU 130 and PD 132, and the writeoperation may not be completed successfully unless the complementarydata node 108 is pulled up to the high voltage. This conflict is usuallytermed as “completion.” Thus, contention and completion may poseproblems in successfully completing a write operation in the memory cell100.

FIG. 2 a schematically illustrates an exemplary memory cell 200 a, inaccordance with various embodiments of the present invention. In variousembodiments, the memory cell 200 a may store a single bit of data, andmay be used, for example, in a register file or a main memory of acomputing device. In various embodiments, the memory cell 200 a mayinclude a data node programming module 291 configured to program a datanode 208 to bit 0 or bit 1, based at least in part on a write data line204. The memory cell 200 a may also include a complementary data nodeprogramming module 292 configured to program a complementary data node210 to a bit (e.g., 0 or 1) that is opposite to the bit programmed inthe data node 208, based at least in part on a complementary write dataline 208. For example, if bit 0 is programmed in the data node 208, bit1 may be programmed in the complementary data node 210, and vice versa.

In various embodiments, the data node programming module 291 may beoperatively coupled to the write data line 204 through a pass gatetransistor 240, and the complementary data node programming module 292may be operatively coupled to the complementary write data line 208through a pass gate transistor 242. A write word line 202 may beconfigured to control the pass gate transistors 240 and 242. A moredetailed structure and operation of the data node programming module 291and the complementary data node programming module 292 will be discussedin more detail herein later.

The memory cell 200 a may also include a voltage module 250 configuredto provide a first supply voltage 295 to the data node programmingmodule 291, and to provide a second supply voltage 296 to thecomplementary data node programming module 292. In various embodiments,the first and second supply voltages may be different for at least aperiod of time the memory cell 200 a is being programmed. For example,the voltage module 250 may be configured such that the first supplyvoltage is relatively lower than the second supply voltage for a periodof time while a bit 0 is being programmed in the data node 208, and maybe further configured such that the second supply voltage is relativelylower than the first supply voltage for a period of time while a bit 1is being programmed in the data node 208, as will be explained in moredetail herein later.

In various embodiments, the voltage module 250 may be external to thememory cell 200 a. That is, the voltage module 250 (or at least a partof the voltage module 250) may not be a part of the memory cell 200 a.In some of these embodiments, the voltage module 250 may be shared withthe memory cell 200 a, and one or more other memory cells (notillustrated in the FIG. 2 a).

FIG. 2 b schematically illustrates an exemplary memory cell 200 b, inaccordance with various embodiments of the present invention. In variousembodiments, the memory cell 200 b illustrates the memory cell 200 a ofFIG. 2 a in more detail. In various embodiments, the memory cell 200 bmay include a plurality of P-channel and N-channel metal oxidesemiconductor field effect (MOSFET) transistors, although any otherappropriate type(s) of transistors (e.g., bipolar junction transistor(BJT), junction gate field effect transistor (JFET), and/or the like)may also be used, as will be appreciated by those skilled in the artbased on the teachings provided in this disclosure.

In various embodiments, the memory cell 200 b may be operatively coupledto the write word line 202 that transitions from a low voltage (i.e.,bit 0) to a high voltage (i.e., bit 1) whenever data is to be written tothe memory cell 200 b. In various embodiments, the memory cell 200 b mayalso be operatively coupled to the write data line 204 and thecomplementary write data line 206. Similar to the memory cell 100, thewrite data line 204 of memory cell 200 b may be set to 0 when data bit 0is written to the memory cell 200 b, and may be set to 1 when data bit 1is written to the memory cell 200 b. The complementary write data line206 may, on the other hand, be set to 1 when data bit 0 is written tothe memory cell 200 b, and may be set to 0 when data bit 1 is written tothe memory cell 200 b.

In various embodiments, the memory cell 200 b may include the data node208 and the complementary data node 210, which may be operativelycoupled to the write data line 204 and the complementary write data line206 through pass gate transistors PG 240 and PG 242, respectively. Invarious embodiments, the pass gate transistors PG 140 and PG 142 may beN-channel MOSFETs, and may be controlled by the write word line 202.

The memory cell 200 b may also include the voltage module 250(illustrated by dotted line), that may be shared with one or more memorycells. For example, in one embodiment, the voltage module 250 may beshared with 7 other memory cells. In various embodiments, the voltagemodule 250 may be external to the memory cell 200 b.

In various embodiments, the voltage module 250 may include a number ofshared transistors (e.g., P-channel MOSFETs), e.g., shared transistorsSH 252 and SH 254. In various embodiments, the shared transistor SH 252may be operatively coupled between the supply voltage Vcc and a node M,and the shared transistor SH 254 may be operatively coupled between thesupply voltage Vcc and a node N. In various embodiments, the SH 252 maybe controlled by the complementary write data line 206, whereas the SH254 may be controlled by the write data line 204.

Although FIG. 2 b illustrates only one shared transistor SH 252operatively coupled between Vcc and node M, there may be more than oneshared transistor operatively coupled, in parallel, between Vcc and nodeM. Similarly, although FIG. 2 b illustrates only one shared transistorSH 254 operatively coupled between Vcc and node N, there may be morethan one shared transistor operatively coupled, in parallel, between Vccand node N. Coupling more number of shared transistors between Vcc andnodes M and/or N may increase a driving capability (e.g., the number ofmemory cells driven by the voltage module 250) of the voltage module250.

The voltage module 250 may also include an equalizing transistor Eq 258,which may be, for example, a P-channel MOSFET. In various embodiments,the Eq 258 may be operatively coupled between nodes M and N, and may becontrolled by an equalizing control signal EqControl.

In various embodiments, the data node programming module 291(illustrated by dotted line) may include a pull up transistor PU 220 anda pull down transistor 222, and the complementary data node programmingmodule 292 (also illustrated by dotted line) may include a pull uptransistor 230 and a pull down transistor PD 232. In variousembodiments, the pull up transistors 220 and 230 may be P-channelMOSFETs, while the pull down transistors 222 and 232 may be N-channelMOSFETs, although other appropriate type(s) of transistors may also beused. In various embodiments, PU 220 may be operatively coupled betweennode M (configured to receive the first supply voltage 295) of thevoltage module 250 and the data node 208, and PD 222 transistor may beoperatively coupled between the data node 208 and ground. In variousembodiments, PU 220 and PD 222 may be controlled by the complementarydata node 210. Also, PU 230 may be operatively coupled between node N(configured to receive the second supply voltage 296) of the voltagemodule 250 and the complementary data node 210, and PD 232 may beoperatively coupled between the complementary data node 210 and ground.In various embodiments, PU 230 and PD 232 may be controlled by the datanode 208.

Similar to the memory cell 100 of FIG. 1, in the memory cell 200 b ofFIG. 2 b, a single data bit (bit 0 or bit 1) may be stored in the datanode 208. Also, when bit 0 is stored in the data node 208, bit 1 may bestored in the complementary data node 206, and vice versa. In variousembodiments, an appropriate read circuit (not illustrated in FIG. 2 b)may read the data bit stored in the data node 208 and/or thecomplementary data node 210.

The operation of the memory cell 200 b is now explained by assuming thatthe memory cell 200 b had a bit 1 stored in the data node 208, and iscurrently being programmed to store bit 0 (illustrated by “transitionfrom 1 to 0” in the data node 208 in FIG. 2 b). Thus, it is also assumedthat the memory cell 200 b had a bit 0 stored in the complementary datanode 210, and is currently being programmed to store bit 1 (illustratedby “transition from 0 to 1” in the complementary data node 210 in FIG. 2b).

As previously discussed with respect to FIG. 1, while the memory cell200 b is being programmed, the write word line 202 may transition fromlow (e.g., 0) to high (e.g., 1) state, which may turn ON the N-channelpass gate transistors PG 240 and PG 242.

Also, while the memory cell 200 b is being programmed, the write dataline 204 may be 0, and the complementary write data line 206 may be 1(as data bit 0 is being written to the memory cell 200 b). Accordingly,the P-channel MOSFET SH 252 (which may be controlled by thecomplementary write data line 206) may be OFF, and the P-channel MOSFETSH 254 (which may be controlled by the write data line 204) may be ON.Also, in various embodiments, the EqControl signal may be configuredsuch that the equalizing transistor Eq 258 is turned ON for at least aperiod of time the memory cell 200 b is being programmed. Thus, node Mmay receive the supply voltage Vcc through stacked transistors SH 254and Eq 258 (as transistor SG 252 if OFF), whereas node N may receive thesupply voltage Vcc through transistor SH 254. Put differently, node Mmay receive the supply voltage Vcc through two stacked transistors,whereas node N may receive the supply voltage Vcc through a singletransistor.

Also, there may a voltage drop in SH 254, resulting in a voltage V_(N)at node N being slightly less than the supply voltage Vcc. Furthermore,because of the voltage drop at the Eq 258, in various embodiments, thevoltage at node M (e.g., V_(M)) may be even lower than the voltage V_(N)at node N. Thus, for at least a period of time while the memory cell 200b is being programmed to store a bit 0, the voltage V_(M) may be lessthan voltage V_(N), where the difference between the two voltages may bedue to the voltage drop across the equalizing transistor Eq 258.

Also, while the memory cell 200 b is being programmed to store bit 0, PG240 may be ON and may try to pull down the data node 208 to thepotential of the write data line 204 (which is at a low voltage), whilethe pull up transistor PU 220 (which may still be ON, as thecomplementary data node 210 may still be at a low voltage) may try topull up the data node 208 to the potential of the node M. However, asthe voltage V_(M) at node M is now relatively low (e.g., as compared tovoltage V_(N) at node N and the supply voltage Vcc), it may berelatively easier for the transistor PG 240 to overpower the transistorPU 220, and pull down the data node 208 to low voltage (e.g., such thatthe data node 208 stores bit 0).

On the other hand, while the memory cell 200 b is being programmed, PG242 may be ON and may try to pull up the complementary data node 210 tothe potential of the complementary write data line 206 (which is at ahigh voltage), while the pull down transistor PD 232 (which may still beON, as the data node 208 may still be at a low voltage initially) maytry to pull down the complementary data node 210 to the groundpotential. Also, PU 230 may try to turn ON and pull up the complementarydata node 210 at the voltage V_(N) at node N. As the voltage V_(N) atnode N is now relatively high (e.g., as compared to voltage V_(M) atnode M), it may be relatively easier to pull up the complementary datanode 210 at high voltage (e.g., such that the data node 210 stores bit1).

Thus, lowering the voltage V_(M) at node M (e.g., as compared to voltageV_(N) at node N) by introducing the equalizing transistor Eq 258 mayfacilitate the PG 240 to overpower the PU 220 relatively easily, therebyfacilitating the memory cell 200 b to resolve contention between PG 240and PU 220, and facilitating the memory cell 200 b to pull down the datanode 208 at low voltage (such that the memory cell 200 b stores bit 0).This may not be the case for the conventional memory cell 100 of FIG. 1,where both the pull up transistors PU 120 and PU 130 are coupled to thesame node (node A). In various embodiments, this may also help reduce orlower the active Vcc of the memory cell 200 b, without adverselyaffecting the write or programming operation of the memory cell 200 b.

Also, on the other hand, while a bit 1 is to be programmed in the memorycell 200 b (i.e., a situation opposite to the situation discussed sofar), in various embodiments, the transistors SH 252 and Eq 258 may beON and SH 254 may be OFF for at least a period of time bit 1 is beingprogrammed in the memory cell 200 b. In this case, voltage V_(N) at nodeN may be relatively lower than the voltage V_(M) at node M (because ofthe additional drop in Eq 258, while the supply voltage reaches node Nthrough SH 252 and Eq 258). This may help the transistor PG 242 tooverpower the PU 230, and pull down the voltage of the complementarydata node 210 at the low voltage, thereby facilitating the completion ofthe write operation. Also, the relatively high voltage V_(M) at node M(e.g., as compared to voltage V_(N)) may help in pulling up the datanode 208 to the high voltage.

In various embodiments, the equalizing transistor Eq 258 may be ONwhenever the memory cell 200 b is being programmed (e.g., by making theequalizing control signal always low), which may ensure that thevoltages of nodes M and N are unequal (based on whether a 0 or a 1 isbeing programmed in the memory cell 200 b). In various otherembodiments, the equalizing transistor Eq 258 may be controlled to beturned ON only for a portion of time the memory cell 200 b is beingprogrammed, which may ensure greater variation in voltages of nodes Mand N.

For example, FIG. 2 c illustrates exemplary timing diagram forvariations in the equalizing control signal EqControl of FIG. 2 b. InFIG. 2 c, the memory cell 200 b may be programmed between time t0 andt2, during which the write word line 202 may be high. As illustrated inFIG. 2 c, in various embodiments, EqControl may be high (i.e., the Eq258, which is a P-channel MOSFET, may be OFF) for time t0 to t1, andEqControl may be low (i.e., the Eq 258 may be ON) for time t1 to t2.

Thus, the memory cell may be programmed during a first period of time(e.g., from time t0 and t2) that consists of a second period (e.g., fromtime t0 to t1) and third period (e.g., from time t1 to t2), where Eq 258may be OFF for the second period of time, and may be ON for the thirdperiod of time.

When a bit 0 is to be programmed in the memory cell 200 b, it may bedesirable to bring the data node 208 to low voltage, as previouslydiscussed. Also, during such programming, the SH 252 transistor may beturned OFF (e.g., by the high complementary write data line 206), aspreviously discussed. Also, turning OFF the Eq 258 for the second periodof time (e.g., between t0 to t1) may result in node M not receiving thesupply voltage Vcc (neither through the turned OFF SH 252, nor throughthe SH 254 and Eq 258) for this time period. This may ensure that thedata node 208 is pulled down to low voltage relatively easily (as PU 220is not be receiving a high voltage from node M, the PU 220 may not tryto pull up the data node 208). Also, turning OFF Eq 258 for the secondperiod may not affect the voltage in node N, and hence, may not affectpulling up the complementary data node 210 to a high voltage. Once thedata node 208 is pulled down to low voltage and the complementary datanode 210 is pulled up to high voltage, the Eq 258 may be turned ON attime t1. Turning ON the Eq 258 transistor at or near the end of theprogramming of the memory cell 200 b may be required to at leastpartially equalize the voltages of the nodes M and N, which may berequired for subsequent programming operations and/or other operationsof the memory cell 200 b.

In various embodiments, the duration of the second and third period oftime may be programmable based at least in part on, for example, thetime the memory cell 200 b may take to be properly and fully programmed,and/or on individual characteristics of the pass gate, pull up, and/orpull down transistors of the memory cell 200 b.

FIG. 2 d schematically illustrates an exemplary register file 200 d thatincludes a plurality of memory cells, in accordance with variousembodiments of the present invention. In various embodiments, theplurality of memory cells may include at least a first memory cell 290 aand a second memory cell 290 b, each of which may store a single bit ofdata. Each of the memory cells 290 a and 290 b may be at least in partsimilar to the memory cell 200 b illustrated in FIG. 2 b. Also, althoughonly the components of the memory cell 290 a are labeled in FIG. 2 d,the memory cell 290 b may also include similar components.

In various embodiments, the voltage module 250 of register file 200 dmay be shared by at least the memory cells 290 a and 290 b (and possiblyby, for example, 6 other memory cells). Thus, the two pull uptransistors of memory cells 290 a and 290 b may be operatively coupledto the nodes M and N, as illustrated in FIG. 2 d. Individual memorycells and the voltage module of FIG. 2 d may operate similar to thememory cell 200 b of FIG. 2 b, and hence, operation of the memory cellsof the register file 200 d will not be explained in further detailherein.

FIG. 3 schematically illustrates an exemplary memory cell 300, inaccordance with various embodiments of the present invention. Some ofthe components of the memory cell 300 may be at least in part similar tocorresponding components of the memory cell 200 b of FIG. 2 b.

Similar to memory cell 200 b, in various embodiments, the memory cell300 may be configured to store a single bit of data in data node 308.The memory cell 300 may include a data node programming module 391comprising pull up transistor PU 320 and pull down transistor 322. Thememory cell 300 may also include a complementary data node programmingmodule 392 comprising pull up transistor PU 330 and pull down transistor332.

The memory cell 300 may also include a transistor block 350 that mayinclude transistors T 352 and T 354, and equalizing transistor Eq 358.Unlike the voltage module 250 of FIG. 2 b, in various embodiments, thetransistor block 350 may not be shared with any other memory cell. Also,in various embodiments, the transistors T 352 and T 354 may becontrolled by the data node 308 and complementary data node 310,respectively.

In various embodiments, the memory cell 300 may include a plurality(e.g., K+1 number) of write data lines 304_0, . . . , 304_K,corresponding plurality of complementary write data lines 306_0, . . . ,306_K, and corresponding plurality of write word lines 302_0, . . . ,302_K. Each write data line and complementary write data line may beoperatively coupled to the data node 308 and complementary data node 310through respective pass gate transistors. For example, write data line304_K and complementary write data line 306_K may be operatively coupledto the data node 308 and complementary data node 310 through respectivepass gate transistors PG K1 and PG K2. Each pass gate transistor (e.g.,PG K1 and PG K2) may be controlled by respective write word line (e.g.,write word line 302_K).

The memory cell 300 may be a multi-port memory cell configured to storea single bit of data in the data node 308 and/or complementary data node310. At any time, the memory cell 300 may be programmed using any of the(K+1) write data line, the corresponding complementary write data lineand the corresponding write word line. For example, during a first timeperiod, the memory cell 300 may be programmed using the write data line304_0, complementary write data line 306_0, and write word line 302_0,and/or may also be programmed, during a second time period, using thewrite data line 304_K, complementary write data line 306_K, and writeword line 302_K.

Similar to Eq 258 of FIG. 2 b, the equalizing transistor Eq 358 in thememory cell 300 may be controlled to create a voltage difference innodes M and N, which may facilitate the programming the memory cell 300more effectively, as will be readily understood by those skilled in theart based at least in part on the teachings provided herein.

Although certain example methods, apparatus, and articles of manufacturehave been described herein, the scope of coverage of this disclosure isnot limited thereto. On the contrary, this disclosure covers allmethods, apparatus, and articles of manufacture fairly falling withinthe scope of the appended claims either literally or under the doctrineof equivalents. For example, although the above discloses examplesystems including, among other components, software or firmware executedon hardware, it should be noted that such systems are merelyillustrative and should not be considered as limiting. In particular, itis contemplated that any or all of the disclosed hardware, software,and/or firmware components could be embodied exclusively in hardware,exclusively in software, exclusively in firmware or in some combinationof hardware, software, and/or firmware.

1. A memory device comprising: a first programming module configured toreceive a first supply voltage and to program a data node based at leastin part on a write data line; and a second programming module configuredto receive a second supply voltage and to program a complementary datanode based at least in part on a complementary write data line; whereinthe first supply voltage is different from the second supply voltage fora period of time while the memory device is being programmed.
 2. Thememory device of claim 1, wherein the first supply voltage is relativelyhigher than the second supply voltage at least for a period of timewhile a bit 1 is being programmed in the memory device.
 3. The memorydevice of claim 1, wherein the first supply voltage is relatively lowerthan the second supply voltage for a period of time while a bit 0 isbeing programmed in the memory device.
 4. The memory device of claim 1,wherein the first programming module comprises a first pull uptransistor operatively coupled between the data node and a first supplynode configured to receive the first supply voltage, the first pull uptransistor being controlled by the complementary data node; and whereinthe second programming module comprises a second pull up transistoroperatively coupled between the complementary data node and a secondsupply node configured to receive the second supply voltage, the secondpull up transistor being controlled by the data node.
 5. The memorydevice of claim 4, further comprising: a first pass gate transistoroperatively coupled between the write data line and the data node, thefirst pass gate transistor being controlled by a write word line; and asecond pass gate transistor operatively coupled between thecomplementary write data line and the complementary data node, thesecond pass gate transistor being controlled by the write word line. 6.The memory device of claim 4, wherein the second pull up transistorreceives the second supply voltage from a supply voltage source throughN number of stacked transistors for at least the period of time, andwherein the first pull up transistor receives the first supply voltagefrom the supply voltage source through (N+1) number of stackedtransistors for at least the period of time, wherein N is a non-zerointeger.
 7. The memory device of claim 4, further comprising a voltagemodule configured to supply the first and second supply voltages,wherein the voltage module comprises: an equalizing transistoroperatively coupled between the first supply node and the second supplynode, the equalizing transistor being controlled by an equalizingcontrol signal.
 8. The memory device of claim 7, wherein the voltagemodule further comprises: a first shared transistor operatively coupledbetween a supply voltage source and the first supply node, the firstshared transistor being controlled by the complementary write data line;and a second shared transistor operatively coupled between the supplyvoltage source and the second supply node, the second shared transistorbeing controlled by the write data line.
 9. The memory device of claim8, wherein the memory device is configured such that the first supplynode receives the first supply voltage from the supply voltage sourcethrough the equalizing transistor and the second shared transistor forat least the period of time, and the second supply node receives thesecond supply voltage from the supply voltage source through the secondshared transistor for at least the period of time.
 10. A method forprogramming a memory cell, the method comprising: providing, by avoltage module, a first supply voltage and second supply voltage;providing, to a first programming module, the first supply voltage;providing, to a second programming module, the second supply voltage,which is different from the first supply voltage for at least a periodof time while the memory cell is being programmed; programming, by thefirst programming module, a data node using the first supply voltage,based at least in part on a write data line; and programming, by thesecond programming module, a complementary data node using the secondsupply voltage, based at least in part on a complementary write dataline.
 11. The method of claim 10, wherein said providing the firstsupply voltage comprises providing the first supply voltage at a firstsupply node; wherein said providing the second supply voltage comprisesproviding the second supply voltage at a second supply node; wherein themethod further comprises: charging, for at least a period of time whilea data bit is being programmed in the memory cell, the second supplynode through N number of stacked transistors operatively coupled betweenthe second supply node and a supply voltage source, wherein N is anon-zero integer; and charging, for at least the period of time whilethe data bit is being programmed in the memory cell, the first supplynode through (N+1) number of stacked transistors operatively coupledbetween the first supply node and the supply voltage source.
 12. Themethod of claim 11, further comprising: controlling an equalizingtransistor operatively coupled between the first supply node and thesecond supply node such that the first supply voltage is relativelylower than the second supply voltage at least for the period of timewhile the data bit is being programmed in the memory cell.
 13. Aregister file, comprising: including a plurality of memory cells, afirst memory cell of the plurality of memory cells including: a firstprogramming module configured to receive a first supply voltage, and toprogram a first data node based at least in part on a first write dataline; and a second programming module configured to receive a secondsupply voltage, and to program a second data node based at least in parton a second write data line; wherein the first supply voltage isdifferent from the second supply voltage for at least a period of timewhile the first memory cell is being programmed.
 14. The register fileof claim 13, wherein the first supply voltage is relatively lower thanthe second supply voltage at least for a first period of time while abit 0 is being programmed in the first memory cell, and wherein thefirst supply voltage is relatively higher than the second supply voltageat least for a second period of time while a bit 1 is being programmedin the first memory cell.
 15. The register file of claim 13, furthercomprising: a first pass gate transistor operatively coupled between thefirst write data line and the first data node, the first pass gatetransistor being controlled by a write word line; a second pass gatetransistor operatively coupled between the second write data line andthe second data node, the second pass gate transistor being controlledby the write word line; wherein the first programming module comprises afirst pull up transistor operatively coupled between the first data nodeand a first supply node configured to receive the first supply voltage,the first pull up transistor being controlled by the second data node;and wherein the second programming module comprises a second pull uptransistor operatively coupled between the second data node and a secondsupply node configured to receive the second supply voltage, the secondpull up transistor being controlled by the first data node.
 16. Theregister file of claim 13, further comprising a voltage module, whereinthe voltage module comprises: an equalizing transistor operativelycoupled between the first supply node and the second supply node; afirst shared transistor operatively coupled between the first supplynode and a supply voltage source, the first shared transistor beingcontrolled by the second write data line; and a second shared transistoroperatively coupled between the second supply node and the supplyvoltage source, the second shared transistor being controlled by thefirst write data line.
 17. A memory cell, comprising: means forprogramming a first data node using a first supply voltage, based atleast in part on a first write data line; and means for programming asecond data node using a second supply voltage, based at least in parton a second write data line; wherein the second supply voltage isdifferent from the first supply voltage for at least a period of timewhile the memory cell is being programmed.
 18. The memory cell of claim17, further comprising: means for producing the first supply voltage andthe second supply voltage and providing the first supply voltage to themeans for programming the first data node and providing the secondsupply voltage to the means for programming the second data node. 19.The memory cell of claim 18, wherein the means for supplying the firstsupply voltage and the second supply voltage is configured to supply thefirst supply voltage at a first supply node and the second supplyvoltage at a second supply node, and the memory cell further comprising:means for controlling an equalizing transistor operatively coupledbetween the first supply node and the second supply node such that thefirst supply voltage is relatively lower than the second supply voltageat least for the period of time while a data bit is being programmed inthe memory cell.
 20. The memory cell of claim 19, further comprising:means for charging, for at least a period of time while the data bit isbeing programmed in the memory cell, the second supply node through Nnumber of stacked transistors operatively coupled between the secondsupply node and a supply voltage source, wherein N is a non-zerointeger; and means for charging, for at least the period of time whilethe data bit is being programmed in the memory cell, the first supplynode through (N+1) number of stacked transistors operatively coupledbetween the first supply node and the supply voltage source.